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PolarHV TM HiPerFET
Power MOSFET
ISOPLUS264 TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFL 82N60P
V DSS = 600 V
I D25 = 82 A
R DS(on) ≤ 78 m ?
t rr ≤ 200 ns
Symbol
Test Conditions
Maximum Ratings
ISOPLUS264 TM (IXFL)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
600
600
V
V
V GSS
V GSM
Continuous
Transient
± 30
± 40
V
V
G
D
S
(Isolated Tab)
I D25
I DM
I AR
E AR
E AS
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
55
200
82
100
5
A
A
A
mJ
J
G = Gate
S = Source
Features
D = Drain
dv/dt
P D
T J
T JM
T stg
T L
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
20
625
-55 ... +150
150
-55 ... +150
300
V/ns
W
° C
° C
° C
° C
l
l
l
l
International standard isolated
package
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
V ISOL
F C
50/60 Hz, RMS
I ISOL ≤ 1 mA
Mounting force
t = 1 min
t=1s
2500
3000
28..150 / 6.4..30
V~
V~
N/lb
l
l
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Weight
10
g
Advantages
l
Easy to mount
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
l
l
Space savings
High power density
BV DSS
V GS = 0 V, I D = 3 mA
600
V
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 8 mA
V GS = ± 30 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = I T , Note 1
T J = 125 ° C
3.0
5.0
± 200
25
1000
78
V
nA
μ A
μ A
m ?
? 2006 IXYS All rights reserved
DS99531E(02/06)
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